Stochastic processes in magnetization reversal involving domain wall motion in magnetic memory elements
Materials Science
2021-02-24 v1 Applied Physics
Abstract
We show experimentally through time-resolved conductance measurements that magnetization reversal through domain wall motion in sub-100 nm diameter magnetic tunnel junctions is dominated by two distinct stochastic effects. The first involves the incubation time related to domain wall nucleation, while the second results from stochastic motion in the Walker regime. Micromagnetics simulations reveal several contributions to temporal pinning of the wall near the disk center, including Bloch point nucleation and wall precession. We show that a reproducible ballistic motion is recovered when Bloch and N\'eel wall profiles become degenerate in energy in optimally sized disks, which enables quasi-deterministic motion.
Cite
@article{arxiv.2009.07492,
title = {Stochastic processes in magnetization reversal involving domain wall motion in magnetic memory elements},
author = {Paul Bouquin and Joo-Von Kim and Olivier Bultynck and Siddharth Rao and Sebastien Couet and Gouri Sankar Kar and Thibaut Devolder},
journal= {arXiv preprint arXiv:2009.07492},
year = {2021}
}