We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicular-magnetic-field stabilization of the quantum electron solid.
@article{arxiv.2409.06686,
title = {Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields},
author = {M. Yu. Melnikov and D. G. Smirnov and A. A. Shashkin and S. -H. Huang and C. W. Liu and S. V. Kravchenko},
journal= {arXiv preprint arXiv:2409.06686},
year = {2025}
}