In this paper, we propose a THz probe technique to obtain spatially resolved information about the electronic spectra inside nanowire-based FETs. This spectroscopic approach employs a segmented multi-gate design for the local detection of quantum transitions between few-electron states within the FET channel. We simulate the intra-band THz response of such devices by means of a many-body quantum approach, taking quantization and Coulomb interaction effects into account. The obtained simulation results demonstrate the capabilities of the proposed technique which go beyond the limitations of standard characterization methods.
Cite
@article{arxiv.0706.1417,
title = {Spatially resolved THz response as a characterization concept for nanowire FETs},
author = {K. M. Indlekofer and R. Németh and J. Knoch},
journal= {arXiv preprint arXiv:0706.1417},
year = {2007}
}