Silicon intercalation into the graphene-SiC interface

F. Wang; K. Shepperd; J. Hicks; M. S. Nevius; H. Tinkey; A. Tejeda; A. Taleb-Ibrahimi; F. Bertran; P. Le F`evre; D. B. Torrance; P. First; W. A. de Heer; A. A. Zakharov; E. H. Conrad

doi:10.1103/PhysRevB.85.165449

Silicon intercalation into the graphene-SiC interface

Mesoscale and Nanoscale Physics 2015-06-03 v1

Authors: F. Wang , K. Shepperd , J. Hicks , M. S. Nevius , H. Tinkey , A. Tejeda , A. Taleb-Ibrahimi , F. Bertran , P. Le F`evre , D. B. Torrance , P. First , W. A. de Heer , A. A. Zakharov , E. H. Conrad

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Abstract

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.

Keywords

epitaxial graphene

Cite

@article{arxiv.1111.2946,
  title  = {Silicon intercalation into the graphene-SiC interface},
  author = {F. Wang and K. Shepperd and J. Hicks and M. S. Nevius and H. Tinkey and A. Tejeda and A. Taleb-Ibrahimi and F. Bertran and P. Le F`evre and D. B. Torrance and P. First and W. A. de Heer and A. A. Zakharov and E. H. Conrad},
  journal= {arXiv preprint arXiv:1111.2946},
  year   = {2015}
}

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6 pages, 8 figures, submitted to PRB

Silicon intercalation into the graphene-SiC interface

Abstract

Keywords

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