Second order divergence in the third order DC response of a cold semiconductor
Mesoscale and Nanoscale Physics
2020-04-07 v1
Abstract
In this work, we present the analytical expression for the second order divergence in the third order DC response of a cold semiconductor, which can be probed by different electric field setups. Results from this expression were then compared, for the response of the gapped graphene monolayer, with numerical results from a velocity gauge calculation of the third order conductivity. The good agreement between the two validates our analytical expression.
Cite
@article{arxiv.2004.01919,
title = {Second order divergence in the third order DC response of a cold semiconductor},
author = {G. B. Ventura and D. J. Passos and J. M. Viana Parente Lopes and J. M. B. Lopes dos Santos},
journal= {arXiv preprint arXiv:2004.01919},
year = {2020}
}
Comments
8 pages, 4 figures