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Scaling Law of Confined Spin-Hall Effect

Mesoscale and Nanoscale Physics 2014-08-01 v1

Abstract

We incorporate quantum size effect to investigate the extrinsic spin-Hall effect in ultrathin metal films. A Lippmann-Schwinger formalism based theoretical method, accounting for quantum confinement and surface roughness scattering, is developed to calculate both spin-Hall and longitudinal resistivities and spin-Hall angle. The presence of quantum confinement gives rise to a linear relation ρsH=αρ+β\rho_{sH}=\alpha \rho+\beta between the extrinsic spin-Hall resistivity ρsH\rho_{sH} and longitudinal charge resistivity ρ\rho. The linear term αρ\alpha\rho originates from side jump, and the constant β\beta is due to skew scattering. This deviates significantly from the commonly accepted scaling law ρsH=aρ2+bρ\rho_{sH}=a\rho^2+b\rho in a bulk conductor. Thus we call for cautious interpretation of experimental data when applying the scaling law.

Keywords

Cite

@article{arxiv.1407.8278,
  title  = {Scaling Law of Confined Spin-Hall Effect},
  author = {Xuhui Wang and Jiang Xiao and Aurélien Manchon and Sadamichi Maekawa},
  journal= {arXiv preprint arXiv:1407.8278},
  year   = {2014}
}

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