Scaling Law of Confined Spin-Hall Effect
Abstract
We incorporate quantum size effect to investigate the extrinsic spin-Hall effect in ultrathin metal films. A Lippmann-Schwinger formalism based theoretical method, accounting for quantum confinement and surface roughness scattering, is developed to calculate both spin-Hall and longitudinal resistivities and spin-Hall angle. The presence of quantum confinement gives rise to a linear relation between the extrinsic spin-Hall resistivity and longitudinal charge resistivity . The linear term originates from side jump, and the constant is due to skew scattering. This deviates significantly from the commonly accepted scaling law in a bulk conductor. Thus we call for cautious interpretation of experimental data when applying the scaling law.
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Cite
@article{arxiv.1407.8278,
title = {Scaling Law of Confined Spin-Hall Effect},
author = {Xuhui Wang and Jiang Xiao and Aurélien Manchon and Sadamichi Maekawa},
journal= {arXiv preprint arXiv:1407.8278},
year = {2014}
}
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