Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Y. Z. Chen; N. Bovet; T. Kasama; W. W. Gao; S. Yazdi; C. Ma; N. Pryds; S. Linderoth

doi:10.1002/adma.201304634

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Materials Science 2013-12-16 v1

Authors: Y. Z. Chen , N. Bovet , T. Kasama , W. W. Gao , S. Yazdi , C. Ma , N. Pryds , S. Linderoth

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Abstract

Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface.

Keywords

two-dimensional electron gases complex oxide interfaces epitaxial growth spinel alumina room temperature electron mobility redox reaction

Cite

@article{arxiv.1312.3719,
  title  = {Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces},
  author = {Y. Z. Chen and N. Bovet and T. Kasama and W. W. Gao and S. Yazdi and C. Ma and N. Pryds and S. Linderoth},
  journal= {arXiv preprint arXiv:1312.3719},
  year   = {2013}
}

Comments

Adv. Mater. published on-line

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