In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the magnetic and electric field distribution, we found that the EM environment of the qubits contributes significantly to the ESR line efficiency for spin control characterized by the magnetic over electric field ratio generated at the qubit location.
@article{arxiv.2304.03705,
title = {RF simulation platform of qubit control using FDSOI technology for quantum computing},
author = {H. Jacquinot and R. Maurand and G. Troncoso Fernandez Bada and B. Bertrand and M. Cassé and Y. M. Niquet and S. de Franceschi and T. Meunier and M. Vinet},
journal= {arXiv preprint arXiv:2304.03705},
year = {2023}
}
Comments
11 pages, 8 figures, Solid State Electronics (2022)