Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by the combined study of the first-principle calculation, aberration-corrected transmission electron microscopy and Raman spectroscopy. Single/double Se vacancies are revealed originally, which cause some mid-gap impurity states and localize the device carriers. They are found repaired with the result of improved electronic transport. Such a picture is confirmed by a 1.5cm-1 red shift in the Raman spectra.
@article{arxiv.1601.05534,
title = {Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics},
author = {Yuze Meng and Chongyi Ling and Run Xin and Peng Wang and You Song and Haijun Bu and Si Gao and Xuefeng Wang and Fengqi Song and Jinlan Wang and Xinran Wang and Baigeng Wang and Guanghou Wang},
journal= {arXiv preprint arXiv:1601.05534},
year = {2016}
}