We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal and asymmetric quantum well. Due to the Rashba spin-orbit interaction, mimina of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.
@article{arxiv.1301.5181,
title = {Rashba plasmon polaritons in semiconductor heterostructures},
author = {I. V. Iorsh and V. M. Kovalev and M. A. Kaliteevski and I. G. Savenko},
journal= {arXiv preprint arXiv:1301.5181},
year = {2013}
}
Comments
Published (4 pages + 3 figures), 2nd proof version