The resonant part of the B1g electronic Raman scattering response is calculated within the t−J model on a planar lattice as a function of temperature and hole doping, using a finite-temperature diagonalization method for small systems. Results, directly applicable to experiments on cuprates, reveal on doping a very pronounced increase of the width of the two-magnon Raman peak, accompanied by a decrease of the total intensity. At the same time the peak position does not shift substantially in the underdoped regime.
@article{arxiv.cond-mat/9601136,
title = {Raman Response in Doped Antiferromagnets},
author = {P. Prelovsek and J. Jaklic},
journal= {arXiv preprint arXiv:cond-mat/9601136},
year = {2009}
}
Comments
11 pages revtex, 3 postscript figures. Minor corrections and changes from previous version, to be published in Phys. Rev. B