English

Doping dependence of the electronic Raman spectra in cuprates

Superconductivity 2009-11-07 v1 Strongly Correlated Electrons

Abstract

We report electronic Raman scattering measurements on Bi2_2Sr2_2(Y1x_{1-x}Cax_x)Cu2_2O8+δ_{8+\delta} single crystals at different doping levels. The dependence of the spectra on doping and on incoming photon energy is analyzed for different polarization geometries, in the superconducting and in the normal state. We find the scaling behavior of the superconductivity pair-breaking peak with the carrier concentration to be very different in B1g_{1g} and B2g_{2g} geometries. Also, we do not find evidence of any significant variation of the lineshape of the spectra in the overdoped region in both symmetries, while we observe a reduction of the intensity in B2g_{2g} upon decreasing photon energies. The normal state data are analyzed in terms of the memory-function approach. The quasiparticle relaxation rates in the two symmetries display a dependence on energy and temperature which varies with the doping level.

Keywords

Cite

@article{arxiv.cond-mat/0110439,
  title  = {Doping dependence of the electronic Raman spectra in cuprates},
  author = {F. Venturini and M. Opel and R. Hackl and H. Berger and L. Forro' and B. Revaz},
  journal= {arXiv preprint arXiv:cond-mat/0110439},
  year   = {2009}
}

Comments

5 pages, 3 eps figures