Quantum oscillations and high carrier mobility in the delafossite PdCoO$_2$

Clifford W. Hicks; Alexandra S. Gibbs; Andrew P. Mackenzie; Hiroshi Takatsu; Yoshiteru Maeno; Edward A. Yelland

doi:10.1103/PhysRevLett.109.116401

Quantum oscillations and high carrier mobility in the delafossite PdCoO$_2$

Strongly Correlated Electrons 2015-06-05 v1

Authors: Clifford W. Hicks , Alexandra S. Gibbs , Andrew P. Mackenzie , Hiroshi Takatsu , Yoshiteru Maeno , Edward A. Yelland

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Abstract

We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 \mu{\Omega}-cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T^5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is 20 \mum, approximately 10^5 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.

Keywords

quantum oscillations carrier mobility delafossite PdCoO2 de Haas-van Alphen resistivity phonon drag

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@article{arxiv.1207.5402,
  title  = {Quantum oscillations and high carrier mobility in the delafossite PdCoO$_2$},
  author = {Clifford W. Hicks and Alexandra S. Gibbs and Andrew P. Mackenzie and Hiroshi Takatsu and Yoshiteru Maeno and Edward A. Yelland},
  journal= {arXiv preprint arXiv:1207.5402},
  year   = {2015}
}

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accepted for publication in Phys. Rev. Lett

Quantum oscillations and high carrier mobility in the delafossite PdCoO$_2$

Abstract

Keywords

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