Quantum linear magnetoresistance in NbTe2

Hongxiang Chen; Zhilin Li; Xiao Fan; Liwei Guo; Xiaolong Chen

doi:10.1016/j.ssc.2018.02.019

Quantum linear magnetoresistance in NbTe2

Materials Science 2018-04-18 v1 Strongly Correlated Electrons

Authors: Hongxiang Chen , Zhilin Li , Xiao Fan , Liwei Guo , Xiaolong Chen

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Abstract

NbTe2 crystal is quasi-2D layered semimetal with charge density wave ground state showing a distorted-1T structure at room temperature. Here we report the anisotropic magneto-transport properties of NbTe2. An anomalous linear magnetoresistance up to 30% at 3 K in 9 T was observed, which can be well explained by quantum linear magnetoresistance model. Our results reveal that a large quasi-2D Fermi surface and small Fermi pockets with linearly dispersive bands coexist in NbTe2. The comparison with the isostructural material TaTe2 provides more information about the electronic structure evolution with charge density wave transitions in NbTe2 and TaTe2.

Keywords

magnetoresistance magnetic structure phase transitions

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@article{arxiv.1706.08661,
  title  = {Quantum linear magnetoresistance in NbTe2},
  author = {Hongxiang Chen and Zhilin Li and Xiao Fan and Liwei Guo and Xiaolong Chen},
  journal= {arXiv preprint arXiv:1706.08661},
  year   = {2018}
}

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5 pages, 4 figures

Quantum linear magnetoresistance in NbTe2

Abstract

Keywords

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