The quantum-limit Hall effect at ν=nh/eB∼O(1) that hosts a variety of exotic quantum phenomena requires demanding strong magnetic field B and low carrier density n. We propose to realize quantum-limit Hall effect even in the presence of large carrier density residues ne and nh relative to the magnetic field B in topological semimetals, where a single Fermi surface contour allow both electron-type and hole-type carriers and approaches charge neutrality as ne∼nh. The underlying filling factor ν=∣ne−nh∣h/eB explicitly violates the Onsager's relation for quantum oscillations.
@article{arxiv.2011.10060,
title = {Quantum-limit Hall effect with large carrier density in topological semimetals},
author = {Guang Yang and Yi Zhang},
journal= {arXiv preprint arXiv:2011.10060},
year = {2021}
}