Quantum kinetic theory of shift current electron pumping in semiconductors
Materials Science
2009-10-31 v1
Abstract
We develop a theory of laser beam generation of shift currents in non-centrosymmetric semiconductors. The currents originate when the excited electrons transfer between different bands or scatter inside these bands, and asymmetrically shift their centers of mass in elementary cells. Quantum kinetic equations for hot-carrier distributions and expressions for the induced currents are derived by nonequilibrium Green functions. In applications, we simplify the approach to the Boltzmann limit and use it to model laser-excited GaAs in the presence of LO phonon scattering. The shift currents are calculated in a steady-state regime.
Keywords
Cite
@article{arxiv.cond-mat/0011206,
title = {Quantum kinetic theory of shift current electron pumping in semiconductors},
author = {Petr Kral},
journal= {arXiv preprint arXiv:cond-mat/0011206},
year = {2009}
}
Comments
23 pages, 5 figures (Latex)