Properties of Coupled Single-Electron Lines
Abstract
Fundamental properties of two electrostatically interacting single-electron lines (SEL) are determined from a minimalistic tight-binding model. The lines are represented by a chain of coupled quantum wells that could be implemented in a mainstream nanoscale CMOS process technology and tuned electrostatically by DC or AC voltage biases. The obtained results show an essential qualitative difference with two capacitively coupled classical electrical lines. The derived equations and their solutions prove that the two coupled SET lines can create an entanglement between electrons. The results indicate a possibility of constructing electrostatic (non-spin) coupled qubits that could be used as building blocks in a CMOS quantum computer.
Cite
@article{arxiv.1904.06822,
title = {Properties of Coupled Single-Electron Lines},
author = {Krzysztof Pomorski and Panagiotis Giounanlis and Elena Blokhina and Imran Bashir and Dirk Leipold and Robert Bogdan Staszewski},
journal= {arXiv preprint arXiv:1904.06822},
year = {2020}
}
Comments
7 pages, 4 figures