Probing spin-phonon interactions in silicon carbide with Gaussian acoustics
Abstract
Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a novel stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin-strain coupling for various defects in SiC with C3v symmetry. This reveals the importance of shear for future device engineering and enhanced spin-mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant to sensing applications. Finally, we show mechanically driven Autler-Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.
Keywords
Cite
@article{arxiv.1804.10996,
title = {Probing spin-phonon interactions in silicon carbide with Gaussian acoustics},
author = {Samuel J. Whiteley and Gary Wolfowicz and Christopher P. Anderson and Alexandre Bourassa and He Ma and Meng Ye and Gerwin Koolstra and Kevin J. Satzinger and Martin V. Holt and F. Joseph Heremans and Andrew N. Cleland and David I. Schuster and Giulia Galli and David D. Awschalom},
journal= {arXiv preprint arXiv:1804.10996},
year = {2019}
}
Comments
17 pages, 4 figures