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Prediction of switchable half semiconductor in d$^{1}$ transition metal dichalcogenide monolayers

Strongly Correlated Electrons 2015-01-06 v1 Materials Science

Abstract

We propose that a half semiconducting state can exist in trigonal-prismatic transition metal dichalcogenide (TMDC) monolayers of d1^{1} configuration. In that state both electrons and holes are spin polarized and share the same spin channel. On the basis of hybrid density functional theory, we predict in particular that VS2_2 monolayers are half semiconductors with a direct band gap. Moreover, we find that the conduction electron spin orientation of VS2_2 switches under moderate strain. Our predictions thus open up intriguing possibilities for applications of VS2_2 in spintronics and optoelectronics. Our analysis of trigonal-prismatic group-V MX2_2 (M=V, Nb, Ta; X=S, Se, Te) monolayers reveals a broad diversity of electronic states that can be understood qualitatively in terms of localization of dd electrons.

Keywords

Cite

@article{arxiv.1501.00760,
  title  = {Prediction of switchable half semiconductor in d$^{1}$ transition metal dichalcogenide monolayers},
  author = {Peng-Ru Huang and Yao He and Hridis K. Pal and Markus Kindermann},
  journal= {arXiv preprint arXiv:1501.00760},
  year   = {2015}
}