Polaron relaxation in ferroelectric thin films

E. Arveux; D. Levasseur; A. Rousseau; S. Payan; M. Maglione; G. Guegan

Polaron relaxation in ferroelectric thin films

Materials Science 2012-01-11 v1

Authors: E. Arveux , D. Levasseur , A. Rousseau , S. Payan , M. Maglione , G. Guegan

Abstract

We report a dielectric relaxation in ferroelectric thin films of the ABO3 family. We have compared films of different compositions with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperature (T<100K) for frequencies from 100Hz up to 10MHz. This relaxation activation energy is always lower than 200meV. It is very similar to the polaron relaxation that we reported in the parent bulk perovskites. Being independent of the materials size, morphology and texture, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping

Keywords

polaron relaxation ferroelectric thin films dielectric relaxation ABO3 perovskites defect probe cryogenic temperature

Cite

@article{arxiv.1201.2061,
  title  = {Polaron relaxation in ferroelectric thin films},
  author = {E. Arveux and D. Levasseur and A. Rousseau and S. Payan and M. Maglione and G. Guegan},
  journal= {arXiv preprint arXiv:1201.2061},
  year   = {2012}
}

Polaron relaxation in ferroelectric thin films

Abstract

Keywords

Cite

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