English

Lattice Relaxation in Epitaxial BaTiO$_3$ Thin Films

Materials Science 2007-05-23 v1

Abstract

We have investigated the out-of-plane lattice relaxation related to the ferroelectric transitions in epitaxial BaTiO3_3 (BTO) films using synchrotron X-ray diffraction. Under either compressive strain or tensile strain, there is evidence for two structural phase transitions as a function of temperature. The transition temperature TCT_C is a strong function of strain, which can be as much as 100 K above the corresponding TCT_C in bulk. Under compressive strain, the tetragonality of BTO unit cell implies that the polarization of the first ferroelectric phase is out-of-plane, while under tensile strain, the polarization is in-plane. The transitions at lower temperature may correspond to the aaraa\to r or crc\to r transitions, following the notations by Pertsev \textit{et al}. The orientations of the domains are consistent with theoretical predictions.

Keywords

Cite

@article{arxiv.cond-mat/0511518,
  title  = {Lattice Relaxation in Epitaxial BaTiO$_3$ Thin Films},
  author = {Feizhou He and Barrett O. Wells},
  journal= {arXiv preprint arXiv:cond-mat/0511518},
  year   = {2007}
}

Comments

4 pages, 3 figures