We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: [email protected]
@article{arxiv.0810.4272,
title = {Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy},
author = {H. Kohlstedt and A. Petraru and M. Meier J. Denlinger and J. Guo and Y. Wanli and A. Scholl and B. Freelon and T. Schneller and R. Waser and P. Yu and R. Ramesh and T. Learmonth and P. -A. Glans and K. E. Smith},
journal= {arXiv preprint arXiv:0810.4272},
year = {2008}
}