Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities
Abstract
We present a theoretical model that allows us to describe the polariton dynamics in a semiconductor microcavity at large densities, for the case of non-resonant excitation. Exciton-polariton scattering from a thermalized exciton reservoir is identified as the main mechanism for relaxation into the lower polariton states. A maximum in the polariton distribution that shifts towards lower energies with increasing pump-power or temperature is shown, in agreement with recent experiments. Above a critical pump-power, macroscopic occupancies (5 \times 10^4) can be achieved in the lowest energy polariton state. Our model predicts the possibility of Bose-Einstein Condensation of polaritons, driven by exciton-polariton interaction, at densities well below the saturation density for CdTe microcavities.
Cite
@article{arxiv.cond-mat/0206276,
title = {Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities},
author = {D. Porras and C. Ciuti and J. J. Baumberg and C. Tejedor},
journal= {arXiv preprint arXiv:cond-mat/0206276},
year = {2009}
}
Comments
13 pages, 11 figures, accepted for publication in Phys. Rev. B