Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions
Abstract
Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultra-scaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the efficiency of energy-harvesting, photo-catalysis and photo-detection. However, a detailed understanding of plasmonic hot carrier generation and particularly the transfer at metal-semiconductor interfaces is still elusive. In this paper, we introduce a monolithic metal-semiconductor (Al-Ge) heterostructure device, providing a platform to examine surface plasmon decay and hot electron transfer at an atomically sharp Schottky nanojunction. The gated metal-semiconductor heterojunction device features electrostatic control of the Schottky barrier height at the Al-Ge interface, enabling hot electron filtering. The ability of momentum matching and to control the energy distribution of plasmon-driven hot electron injection is demonstrated by controlling the interband electron transfer in Ge leading to negative differential resistance.
Cite
@article{arxiv.2006.08385,
title = {Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions},
author = {Masiar Sistani and Maximilian G. Bartmann and Nicholas A. Güsken and Rupert F. Oulton and Hamid Keshmiri and Minh Anh Luong and Zahra Sadre-Momtaz and Martien I. den Hertog and Alois Lugstein},
journal= {arXiv preprint arXiv:2006.08385},
year = {2020}
}