English

Ultra-broadband Optical Switching Plasmons Waveguide in Ge Nanowires

Optics 2024-03-12 v1

Abstract

Plasmonic devices, with their ultra-high integration density and data-carrying capacity comparable to optical devices, are currently a hot topic in the field of nanophotonic devices. Photodetectors, non-volatile memories, and ultra-compact lasers based on plasmons in low-dimensional materials are emerging at a rapid pace. However, the narrow optical response band and limited of convenient tunable methods currently available have hindered the development of these plasmonic materials. Here, we report a ultrabroadband non-equilibrium plasmonic responses based on Ge nanowires tuned by optical method. We tracked the blue shift of the plasmonic response of Ge nanowires due to photo-induced carriers over an ultra-broad spectral range of 800-2000 cm1cm^{-1}. For the first time, we have achieved the imaging of propagating surface plasmon polaritons (SPPs) in semiconductor nanowires, which were tuned by photo-induced carriers. The ultrafast and ultrabroadband response of semiconductor nanowire plasmons is of great significance for future ultrafast all-optical devices.

Keywords

Cite

@article{arxiv.2403.06596,
  title  = {Ultra-broadband Optical Switching Plasmons Waveguide in Ge Nanowires},
  author = {Xinghui Liu and Kaili Chang and Jiarong Guo and Mengfei Xue and Ran Zhou and Ke Chen and Jianing Chen},
  journal= {arXiv preprint arXiv:2403.06596},
  year   = {2024}
}