Planar Nernst effect from hidden band geometry in layered two-dimensional materials

The Nernst effect is a versatile phenomenon relevant for energy harvesting, magnetic sensing, probing band topology and charge-neutral excitations. The planar Nernst effect (PNE) generates an in-plane voltage transverse to an applied temperature gradient under an in-plane magnetic field. Conventional Berry curvature-induced PNE is absent in two-dimensional (2D) systems, as the out-of-plane Berry curvature does not couple to the in-plane electron velocity. We challenge this notion by demonstrating a distinct planar Nernst effect in quasi-2D materials (2DPNE). We show that the 2DPNE originates from previously overlooked planar components of Berry curvature and orbital magnetic moment, arising from inter-layer tunneling in multilayered 2D systems. We comprehensively analyze the band-geometric origin and crystalline symmetry constraints on 2DPNE responses. We illustrate its experimental feasibility in strained bilayer graphene. Our findings significantly expand the theoretical understanding of planar Nernst effects, providing a clear pathway for next-generation magnetic sensing and energy-harvesting applications.