Phase Analysis of Thin Film Oxide Systems by AES and EELS

V. G. Beshenkov; V. A. Marchenko; V. T. Volkov; A. G. Znamenskii

Phase Analysis of Thin Film Oxide Systems by AES and EELS

Materials Science 2007-05-23 v1

Authors: V. G. Beshenkov , V. A. Marchenko , V. T. Volkov , A. G. Znamenskii

Abstract

Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) in a reflection mode are compared as the methods for phase composition investigation of thin film oxide systems by ion profiling. As an example, the Al/Al2O3/Si and YBa2Cu3O7/CeO2/Al2O3 systems are considered. The adaptation of applied statistics methods for AES and EELS data treatment is discussed.

Keywords

Auger electron spectroscopy electron energy loss spectroscopy thin film oxides phase composition ion profiling

Cite

@article{arxiv.cond-mat/9812411,
  title  = {Phase Analysis of Thin Film Oxide Systems by AES and EELS},
  author = {V. G. Beshenkov and V. A. Marchenko and V. T. Volkov and A. G. Znamenskii},
  journal= {arXiv preprint arXiv:cond-mat/9812411},
  year   = {2007}
}

Comments

8 pages LaTex, 16 figures PostScript

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