English

Pfaffian formalism for higher-order topological insulators

Mesoscale and Nanoscale Physics 2020-07-23 v3 Strongly Correlated Electrons

Abstract

We generalize the Pfaffian formalism, which has been playing an important role in the study of time-reversal invariant topological insulators (TIs), to 3D chiral higher-order topological insulators (HOTIs) protected by the product of four-fold rotational symmetry C4C_4 and the time-reversal symmetry TT. This Pfaffian description reveals a deep and fundamental link between TIs and HOTIs, and allows important conclusions about TIs to be generalized to HOTIs. As examples, we demonstrate in the Letter how to generalize Fu-Kane's parity criterion for TIs to HOTIs, and also present a general method to efficiently compute the Z2Z_2 index of 3D chiral HOTIs without a global gauge.

Keywords

Cite

@article{arxiv.1906.03675,
  title  = {Pfaffian formalism for higher-order topological insulators},
  author = {Heqiu Li and Kai Sun},
  journal= {arXiv preprint arXiv:1906.03675},
  year   = {2020}
}
R2 v1 2026-06-23T09:48:11.707Z