English

Periodically driven four-dimensional topological insulator with tunable second Chern number

Mesoscale and Nanoscale Physics 2024-01-09 v1

Abstract

In recent years, Floquet engineering has attracted considerable attention as a promising approach for tuning topological phase transitions. In this work, we investigate the effects of high-frequency time-periodic driving in a four-dimensional (4D) topological insulator, focusing on topological phase transitions at the off-resonant quasienergy gap. The 4D topological insulator hosts gapless three-dimensional boundary states characterized by the second Chern number C2C_{2}. We demonstrate that the second Chern number of 4D topological insulators can be modulated by tuning the amplitude of time-periodic driving. This includes transitions from a topological phase with C2=±3C_{2}=\pm3 to another topological phase with C2=±1C_{2}=\pm1, or to a topological phase with an even second Chern number C2=±2C_{2}=\pm2 which is absent in the 4D static system. Finally, the approximation theory in the high-frequency limit further confirms the numerical conclusions.

Keywords

Cite

@article{arxiv.2401.02973,
  title  = {Periodically driven four-dimensional topological insulator with tunable second Chern number},
  author = {Zheng-Rong Liu and Rui Chen and Bin Zhou},
  journal= {arXiv preprint arXiv:2401.02973},
  year   = {2024}
}

Comments

11 pages, 9 figures. arXiv admin note: text overlap with arXiv:2312.16013

R2 v1 2026-06-28T14:09:46.246Z