Chirally stacked N-layer graphene is a semimetal with ±pN band-touching at two nonequivalent corners in its Brillioun zone. We predict that an off-resonant circularly polarized light (CPL) drives chirally stacked N-layer graphene into a Floquet Chern Insulators (FCIs), a.k.a. quantum anomalous Hall insulators, with tunable high Chern number CF=±N and large gaps. A topological phase transition between such a FCI and a valley Hall (VH) insulator with high valley Chern number Cv=±N induced by a voltage gate can be engineered by the parameters of the CPL and voltage gate. We propose a topological domain wall between the FCI and VH phases, along which perfectly valley-polarized N-channel edge states propagate unidirectionally without backscattering.
@article{arxiv.1608.07851,
title = {Floquet High Chern Insulators in Periodically Driven Chirally Stacked Multilayer Graphene},
author = {Si Li and Cheng-Cheng Liu and Yugui Yao},
journal= {arXiv preprint arXiv:1608.07851},
year = {2018}
}