Floquet Topological Polaritons in Semiconductor Microcavities
Abstract
We propose and model Floquet topological polaritons in semiconductor microcavities, using the interference of frequency detuned coherent fields to provide a time periodic potential. For arbitrarily weak field strength, where the Floquet frequency is larger than the relevant bandwidth of the system, a Chern insulator is obtained. As the field strength is increased, a topological phase transition is observed with an unpaired Dirac cone proclaiming the anomalous Floquet topological insulator. As the relevant bandwidth increases even further, an exotic Chern insulator with flat band is observed with unpaired Dirac cone at the second critical point. Considering the polariton spin degree of freedom, we find that the choice of field polarization allows oppositely polarized polaritons to either co-propagate or counter-propagate in chiral edge states.
Cite
@article{arxiv.1805.00657,
title = {Floquet Topological Polaritons in Semiconductor Microcavities},
author = {Rongchun Ge and Wijnand Broer and Timothy C. H. Liew},
journal= {arXiv preprint arXiv:1805.00657},
year = {2018}
}
Comments
Accepted by PRB