Performance evaluation of on-chip wavelength conversion based on InP/In$_{1-x}$Ga$_x$As$_y$P$_{1-y}$ semiconductor waveguide platforms
Abstract
We propose and design the high confinement InP/In1-xGaxAsyP1-y semiconductor waveguides and report the results of effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency -26.3 dB is achieved for fixing pump power 100 mW. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. It is indicated the excellent optical properties of the InP/In1-xGaxAsyP1-y waveguides and pave the way towards direct integration telecom band devices on stand semiconductor platforms.
Keywords
Cite
@article{arxiv.2004.05625,
title = {Performance evaluation of on-chip wavelength conversion based on InP/In$_{1-x}$Ga$_x$As$_y$P$_{1-y}$ semiconductor waveguide platforms},
author = {Jin Wen and Kang Li and Yongkang Gong and Ben Hughes and Michael A. Campbell and Mattia Lazzaini and Lina Duan and Chengju Ma and Wei Fan and Zhenan Jia and Haiwei Fu and Nigel Copner},
journal= {arXiv preprint arXiv:2004.05625},
year = {2020}
}
Comments
21 pages