Pattern Competition in the Photorefractive Semiconductors
Soft Condensed Matter
2009-11-07 v1 Materials Science
Abstract
We analytically study the photorefractive Gunn effect in n-GaAs subjected to two external laser beams which form a moving interference pattern (MIP) in the semiconductor. When the intensity of the spatially independent part of the MIP, denoted by , is small, the system has a periodic domain train (PDT), consistent with the results of linear stability analysis. When is large, the space-charge field induced by the MIP will compete with the PDT and result in complex dynamics, including driven chaos via quasiperiodic route.
Keywords
Cite
@article{arxiv.cond-mat/0101056,
title = {Pattern Competition in the Photorefractive Semiconductors},
author = {Yuo-Hsien Shiau and Chin-Kun Hu},
journal= {arXiv preprint arXiv:cond-mat/0101056},
year = {2009}
}