Using combined low temperature scanning tunneling microscopy (STM) and atomic force microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling bonds (DBs) on a hydrogen-passivated Si(100)-2×1 surface (H-Si) by atom manipulation. This method allows erasing of DBs and thus provides an error-correction scheme for hydrogen lithography. Si-terminated tips (Si tips) for hydrogen desorption and H-terminated tips (H tips) for hydrogen passivation are both created by deliberate contact to the H-Si surface and are assigned by their characteristic contrast in AFM. DB passivation is achieved by transferring the H atom that is at the apex of an H tip to the DB, reestablishing a locally defect-free H-Si surface.
@article{arxiv.1706.02560,
title = {Passivation of dangling bonds on hydrogenated Si(100)-2$\times$1: a possible method for error correction in hydrogen lithography},
author = {Niko Pavliček and Zsolt Majzik and Gerhard Meyer and Leo Gross},
journal= {arXiv preprint arXiv:1706.02560},
year = {2017}
}