Paramagnetic structure for the soliton of the $30^\circ$ partial dislocation in silicon
Materials Science
2009-10-31 v1
Abstract
Based on ab initio calculation, we propose a new structure for the fundamental excitation of the reconstructed 30 partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the dislocation core. The unique electronic structure of this defect is consistent with the electron spin resonance signature of the hitherto enigmatic thermally stable R center of plastically deformed silicon. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.
Cite
@article{arxiv.cond-mat/9805328,
title = {Paramagnetic structure for the soliton of the $30^\circ$ partial dislocation in silicon},
author = {Gabor Csanyi and Sohrab Ismail-Beigi and T. A. Arias},
journal= {arXiv preprint arXiv:cond-mat/9805328},
year = {2009}
}
Comments
5 pages, 4 figures