We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. This demonstration of p-doping in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.
@article{arxiv.1310.6494,
title = {p-type doping in CVD grown MoS2 using Nb},
author = {M. Laskar and D. N. Nath and L. Ma and E. Lee and C. H. Lee and T. Kent and Z. Yang and Rohan Mishra and Manuel A Roldan and Juan-Carlos Idrobo and Sokrates T. Pantelides and Stephen J. Pennycook and R. Myers and Y. Wu and S. Rajan},
journal= {arXiv preprint arXiv:1310.6494},
year = {2013}
}