Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

S. Y. Jang; D. Lee; J. -H. Lee; T. W. Noh; Y. Jo; M. -H. Jung; J. -S. Chung

doi:10.1063/1.3006325

Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

Strongly Correlated Electrons 2009-01-30 v1 Other Condensed Matter

Authors: S. Y. Jang , D. Lee , J. -H. Lee , T. W. Noh , Y. Jo , M. -H. Jung , J. -S. Chung

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Abstract

Epitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and YSZ(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass behavior was attributed to competition between an antiferromagnetic interaction in the hexagonal geometry and a ferromagnetic interaction caused by a change in Mn valence induced by excess electrons from the oxygen vacancies.

Keywords

thin films thin film magnetism thin film physics

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@article{arxiv.0901.4651,
  title  = {Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films},
  author = {S. Y. Jang and D. Lee and J. -H. Lee and T. W. Noh and Y. Jo and M. -H. Jung and J. -S. Chung},
  journal= {arXiv preprint arXiv:0901.4651},
  year   = {2009}
}

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Published in Applied Physics Letters

Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

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