Oscillating Nernst-Ettingshausen effect in Bismuth across the quantum limit
Strongly Correlated Electrons
2009-11-11 v2 Mesoscale and Nanoscale Physics
Abstract
In elemental Bismuth, 10 atoms share a single itinerant electron. Therefore, a moderate magnetic field can confine electrons to the lowest Landau level. We report on the first study of metallic thermoelectricity in this regime. The main thermoelectric response is off-diagonal with an oscillating component several times larger than the non-oscillating background. When the first Landau level attains the Fermi Energy, both the Nernst and the Ettingshausen coefficients sharply peak, and the latter attains a temperature-independent maximum. A qualitative agreement with a theory invoking current-carrying edge excitations is observed.
Cite
@article{arxiv.cond-mat/0612112,
title = {Oscillating Nernst-Ettingshausen effect in Bismuth across the quantum limit},
author = {Kamran Behnia and Marie-Aude Measson and Yakov Kopelevich},
journal= {arXiv preprint arXiv:cond-mat/0612112},
year = {2009}
}
Comments
Final published version