Opto-electronic properties of alpha-In2Se3: single-layer to bulk

Yujin Cho; Sean M. Anderson; Bernardo S. Mendoza; Shun Okano; Ramon Carriles; N. Arzate; Anatoli I. Shkrebtii; Di Wu; Keji Lai; D. R. T. Zahn; M. C. Downer

doi:10.1103/PhysRevMaterials.6.034006

Opto-electronic properties of alpha-In2Se3: single-layer to bulk

Materials Science 2022-03-17 v2 Optics

Authors: Yujin Cho , Sean M. Anderson , Bernardo S. Mendoza , Shun Okano , Ramon Carriles , N. Arzate , Anatoli I. Shkrebtii , Di Wu , Keji Lai , D. R. T. Zahn , M. C. Downer

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Abstract

In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.

Keywords

alpha-in2se3 opto-electronic properties linear spectroscopy nonlinear spectroscopy density functional theory g0w0 quintuple layers

Cite

@article{arxiv.1911.01784,
  title  = {Opto-electronic properties of alpha-In2Se3: single-layer to bulk},
  author = {Yujin Cho and Sean M. Anderson and Bernardo S. Mendoza and Shun Okano and Ramon Carriles and N. Arzate and Anatoli I. Shkrebtii and Di Wu and Keji Lai and D. R. T. Zahn and M. C. Downer},
  journal= {arXiv preprint arXiv:1911.01784},
  year   = {2022}
}

Comments

10 pages, 7 figures

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