On the upper limit of thermal conductivity GaN crystals

B. A. Danilchenko; I. A. Obukhov; T. Paszkiewicz; S. Wolski; A. Jezowski

doi:10.1016/j.ssc.2007.08.007

On the upper limit of thermal conductivity GaN crystals

Materials Science 2009-11-13 v2

Authors: B. A. Danilchenko , I. A. Obukhov , T. Paszkiewicz , S. Wolski , A. Jezowski

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Abstract

The maximal value of thermal conductivity \kappa_{max} of the perfect wurzite GaN crystal containing isotopes of natural abundance is estimated. Our upper limit of \kappa=4800 W/Km at T_{max}=32 K is smaller than calculated by Liu and Balandin \kappa=6000 W/Km and higher than obtained by Slack et al \kappa=3750 W/Km. The phenomenological dependence \kappa \propto T^{-1.43} obtained by Mion et al for the temperature interval 300-450 K is extended to 200-300K. For temperatures higher than T_max the best fitting of our experimental data to Callaway's formula is obtained for Grueneisen's constant equal to \gamma = 1.35.

Keywords

GaN thermal conductivity wurtzite Callaway model Gruneisen parameter isotope

Cite

@article{arxiv.0705.4187,
  title  = {On the upper limit of thermal conductivity GaN crystals},
  author = {B. A. Danilchenko and I. A. Obukhov and T. Paszkiewicz and S. Wolski and A. Jezowski},
  journal= {arXiv preprint arXiv:0705.4187},
  year   = {2009}
}

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7 pages, 3 figures

On the upper limit of thermal conductivity GaN crystals

Abstract

Keywords

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