This numerical study examines the importance of self-consistently accounting for transport and electrostatics in the calculaiton of semiconductor/metal Schottky contact resistivity. It is shown that ignoring such self-consistency results in significant under-estimation of the contact resistivity. An explicit numerical method has also been proposed to efficiently improve contact resistivity calculations.
Cite
@article{arxiv.0802.0729,
title = {On the calculation of Schottky contact resistivity},
author = {Yang Liu},
journal= {arXiv preprint arXiv:0802.0729},
year = {2008}
}