We report the observation of quantum Hall effect (QHE) in a Bi2Se3 single crystal having carrier concentration (n) ∼1.13×1019cm−3, three dimensional Fermi surface and bulk transport characteristics. The plateaus in Hall resistivity coincide with minima of Shubnikov de Haas oscillations in resistivity. Our results demonstrate that the presence of perfect two dimensional transport is not an essential condition for QHE in Bi2Se3. The results of high resolution x-ray diffraction (HRXRD), energy-dispersive x-ray spectroscopy (EDX), and residual resistivity measurements show the presence of enhanced crystalline defects and microstrain. We propose that the formation of localized state at the edge of each Landau level due to resonance between the bulk and defect band of Bi2Se3 causes the quantum Hall effect.
@article{arxiv.1606.08576,
title = {Observation of quantum Hall effect in a microstrained Bi$_2$Se$_3$ single crystal},
author = {Devendra Kumar and Archana Lakhani},
journal= {arXiv preprint arXiv:1606.08576},
year = {2016}
}