Novel magnetoresistance features in HgSe single crystal with low electron concentration

A. T. Lonchakov; S. B. Bobin; V. V. Deryushkin; V. I. Okulov; T. E. Govorkova; V. N. Neverov

doi:10.1063/1.5018357

Novel magnetoresistance features in HgSe single crystal with low electron concentration

Materials Science 2018-02-27 v1

Authors: A. T. Lonchakov , S. B. Bobin , V. V. Deryushkin , V. I. Okulov , T. E. Govorkova , V. N. Neverov

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Abstract

For the first time, magnetoresistive properties of the single crystal of HgSe with a low electron concentration were studied in wide range of temperature and magnetic field. Some fundamental parameters of spectrum and scattering of electrons were experimentally determined. Two important features of magnetic transport were found - strong transverse magnetoresistance (MR) and negative longitudinal MR, which can indicate the existence of the topological phase of the Weyl semimetal (WSM) in HgSe. Taking this hypothesis into account we suggest a modified band diagram of the mercury selenide at low electron energies. The obtained results are essential for the deeper understanding of both physics of gapless semiconductors and WSMs - promising materials for various applications in electronics, spintronics, computer and laser technologies.

Keywords

hgse single crystal low electron concentration magnetoresistance weyl semimetal topological phase gapless semiconductor

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@article{arxiv.1712.02134,
  title  = {Novel magnetoresistance features in HgSe single crystal with low electron concentration},
  author = {A. T. Lonchakov and S. B. Bobin and V. V. Deryushkin and V. I. Okulov and T. E. Govorkova and V. N. Neverov},
  journal= {arXiv preprint arXiv:1712.02134},
  year   = {2018}
}

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11 pages, 5 figures

Novel magnetoresistance features in HgSe single crystal with low electron concentration

Abstract

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