Niobate-on-Niobate Resonators with Aluminum Electrodes
Abstract
In this work, we have successfully engineered and examined suspended laterally vibrating resonators (LVRs) on a lithium niobate thin film on lithium niobate carrier wafer (LN-on-LN) platform, powered by aluminum interdigital transducers (IDTs). Unlike the lithium niobate-on-silicon system, the LN-on-LN platform delivers a stress-neutral lithium niobate thin film exhibiting the quality of bulk single crystal. The creation of these aluminum-IDTs-driven LN-on-LN resonators was achieved utilizing cutting-edge vapor-HF release techniques. Our testing revealed both symmetric (S0) and sheer horizontal (SH0) lateral vibrations in the LVR resonators. The resonators displayed a quality factor (Q) ranging between 500 and 2600, and coupling coefficient up to 13.9%. The figure of merit (FOM) can reach as high as 294. The yield of these devices proved to be impressively reliable. Remarkably, our LN-on-LN devices demonstrated a consistently stable temperature coefficient of frequency (TCF) and good power handling. Given the low thermal conductivity of lithium niobate, our LN-on-LN technology presents promising potential for future applications such as highly sensitive uncooled sensors using monolithic chip integrated resonator arrays.
Keywords
Cite
@article{arxiv.2307.03358,
title = {Niobate-on-Niobate Resonators with Aluminum Electrodes},
author = {Yiyang Feng and Sen Dai and Sunil A. Bhave},
journal= {arXiv preprint arXiv:2307.03358},
year = {2023}
}