English

New physical effects on the decay $B_{s(d)} \to \gamma\gamma$ in the sequential fourth Generation model

High Energy Physics - Phenomenology 2011-01-26 v1

Abstract

We study the contributions to the branching ratios of Bs(d)γγB_{s(d)}\to \gamma \gamma decay in the sequential fourth generation model (SM4). We find that the theoretical values of the branching ratios, BR(Bs(d)γγ){\rm BR}(B_{s(d)}\to\gamma\gamma), including the contributions of mtm_{t'} and the new 4×44 \times 4 CKM (CKM4) matrix factors, VtsVtb|V^{*}_{t's}V_{t'b}| and VtdVtb|V^{*}_{t'd}V_{t'b}|, are much different from the minimal standard model (SM) predictions. The new physics effects, especially contributed from the CKM4 matrix factors, can provide more than one order enhancement to the SM prediction. It is shown that the decay Bs(d)γγB_{s(d)}\to \gamma \gamma can test the new physics signals from SM4.

Keywords

Cite

@article{arxiv.1101.4660,
  title  = {New physical effects on the decay $B_{s(d)} \to \gamma\gamma$ in the sequential fourth Generation model},
  author = {H. Chen and W. Huo},
  journal= {arXiv preprint arXiv:1101.4660},
  year   = {2011}
}

Comments

11 pages, 6 figures