English

Native defects and their complexes in spinel LiGa5O8: the puzzle of p-type doping

Materials Science 2024-02-20 v1

Abstract

Recently, LiGa5_5O8_8 was identified as a cubic spinel type ultra-wide-band-gap semiconductor with a gap of about 5.36 eV and reported to be unintentionally p-type. Here we present first-principles calculations of the native defects and various of their complexes to try to explain the occurrence of p-type doping. Although we find Li-vacancies to be somewhat shallower acceptors than in LiGaO2_2, and becoming slightly shallower in complexes with donors such as VO_{\rm O} and GaLi_{\rm Li} antisites, these VLiV_{\rm Li} based defects are not sufficiently shallow to explain p-type doping. The dominant defects are donors and in equilibrium the Fermi level would be determined by compensation between donors and acceptors, and pinned deep in the gap.

Keywords

Cite

@article{arxiv.2402.11162,
  title  = {Native defects and their complexes in spinel LiGa5O8: the puzzle of p-type doping},
  author = {Klichchupong Dabsamut and Kaito Takahashi and Walter R. L. Lambrecht},
  journal= {arXiv preprint arXiv:2402.11162},
  year   = {2024}
}