English

Multicomponent dense electron gas as a model of Si MOSFET

Mesoscale and Nanoscale Physics 2009-11-07 v1

Abstract

We solve two-dimensional model of NN-component dense electron gas in the limit of large NN and in a range of the Coulomb interaction parameter: N3/2rs1N^{-3/2}\ll r_s\ll 1. The quasiparticle interaction on the Fermi circle vanishes as 1/N. The ground state energy and the effective mass are found as series in powers of rs2/3r_s^{2/3}. In the quantum Hall state on the lowest Landau level at integer filling: 1ν<N1\ll\nu<N, the charge activation energy gap and the exchange constant are found.

Keywords

Cite

@article{arxiv.cond-mat/0209661,
  title  = {Multicomponent dense electron gas as a model of Si MOSFET},
  author = {S. V. Iordanski and A. Kashuba},
  journal= {arXiv preprint arXiv:cond-mat/0209661},
  year   = {2009}
}

Comments

10 pages, 4 figures