We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the p-group in good agreement with our calculations and internal photoemission spectroscopy. This approach allows us to fabricate molecular rectifying diodes compatible with silicon nanotechnologies for future hybrid circuitries.
@article{arxiv.cond-mat/0305594,
title = {Molecular rectifying diodes from self-assembly on silicon},
author = {Stephane Lenfant and Christophe Krzeminski and Christophe Delerue and Guy Allan and Dominique Vuillaume},
journal= {arXiv preprint arXiv:cond-mat/0305594},
year = {2011}
}