Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. We propose a modified exponential I−V dependence to describe electrical properties. A simple analytical, phenomenological model is found to describe optical efficiency, η, with a high accuracy, by using two parameters only. A link is shown between differential electrical resistivity r=dU/dI just above the lasing offset voltage, and the functional η(U) dependence.
@article{arxiv.1107.4668,
title = {Modified exponential I(U) dependence and optical efficiency of AlGaAs SCH lasers in computer modeling with Synopsys TCAD},
author = {Zbigniew Koziol and Sergey I. Matyukhin},
journal= {arXiv preprint arXiv:1107.4668},
year = {2011}
}