We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate.
@article{arxiv.0803.0708,
title = {Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate},
author = {Joseph Pingenot and Craig E. Pryor and Michael E. Flatté},
journal= {arXiv preprint arXiv:0803.0708},
year = {2008}
}